Title :
Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices
Author :
Karatsori, T.A. ; Theodorou, C.G. ; Ioannidis, E.G. ; Haendler, S. ; Josse, E. ; Dimitriadis, C.A. ; Ghibaudo, G.
Author_Institution :
IMEP-LAHC, Minatec, Grenoble, France
Abstract :
Summary form only given. A full front gate voltage range parameter extraction technique is developed taking into account both the back gate voltages and the channel length. The method is easily applicable to extract precisely all electrical parameters of advanced nano-scale FDSOI MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; nanotechnology; semiconductor device models; silicon-on-insulator; FDSOI CMOS devices; Si; back gate voltage range method; channel length; full front gate voltage range parameter extraction technique; nanoscale FDSOI MOSFET; silicon-on-insulator; Thickness measurement; Tin;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175582
