• DocumentCode
    3388039
  • Title

    Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

  • Author

    Karatsori, T.A. ; Theodorou, C.G. ; Ioannidis, E.G. ; Haendler, S. ; Josse, E. ; Dimitriadis, C.A. ; Ghibaudo, G.

  • Author_Institution
    IMEP-LAHC, Minatec, Grenoble, France
  • fYear
    2015
  • fDate
    21-24 June 2015
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    Summary form only given. A full front gate voltage range parameter extraction technique is developed taking into account both the back gate voltages and the channel length. The method is easily applicable to extract precisely all electrical parameters of advanced nano-scale FDSOI MOSFETs.
  • Keywords
    CMOS integrated circuits; MOSFET; nanotechnology; semiconductor device models; silicon-on-insulator; FDSOI CMOS devices; Si; back gate voltage range method; channel length; full front gate voltage range parameter extraction technique; nanoscale FDSOI MOSFET; silicon-on-insulator; Thickness measurement; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2015 73rd Annual
  • Conference_Location
    Columbus, OH
  • Print_ISBN
    978-1-4673-8134-5
  • Type

    conf

  • DOI
    10.1109/DRC.2015.7175582
  • Filename
    7175582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3388039