Title :
Digital etching of GaAs. The mechanism and the application
Author :
Aoyagi, Y. ; Meguro, T.
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
Abstract :
In this paper, the phenomena of photo-assisted digital etching using a tunable DUV laser is introduced for gallium arsenide semiconductors and the mechanism of the digital etching is discussed.
Keywords :
III-V semiconductors; ULSI; gallium arsenide; laser beam etching; laser materials processing; nanotechnology; GaAs; ULSI; digital etching; gallium arsenide; photo-assisted digital etching; semiconductors; tunable DUV laser; Atomic layer deposition; Bonding; Chemical technology; Controllability; Etching; Fluid flow; Gallium arsenide; Laser beams; Substrates; Tunable circuits and devices;
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
DOI :
10.1109/LEOSST.1996.540674
