DocumentCode
3388071
Title
High power CW RF probe measurements
Author
Lum, A. ; Dale, C. ; Ragle, D. ; Vernon, M.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1997
fDate
4-7 Oct. 1997
Firstpage
191
Lastpage
193
Abstract
A novel technique for accurately and efficiently acquiring high-power, CW (continuous wave) RF probe measurements while overcoming the challenges from bias-driven oscillations and thermal gradients has been developed. The ability to make on-wafer CW high-power measurements addresses the measurement of nonpulsed application devices and also permits traditional RLC transient suppressive circuitry to be implemented as part of the test system, thus averting the high-voltage challenges associated with DC pulsing a RLC configuration. The technique is demonstrated through a series of repeatability tests and correlation with fixtured data.<>
Keywords
MMIC; integrated circuit testing; microwave amplifiers; power amplifiers; probes; CW RF probe measurements; RLC transient suppressive circuitry; bias-driven oscillations; fixtured data; nonpulsed application devices; on-wafer CW high-power measurements; repeatability tests; thermal gradients; Circuit testing; Gallium arsenide; Power amplifiers; Power generation; Power measurement; Probes; Pulse amplifiers; RLC circuits; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location
Miami Beach, FL, USA
Print_ISBN
0-7803-0773-9
Type
conf
DOI
10.1109/GAAS.1992.247193
Filename
247193
Link To Document