DocumentCode
3388111
Title
8-watt high efficiency X-band power amplifier using AlGaAs/GaAs HFET technology
Author
Cooper, S. ; Anderson, K. ; Salzman, K. ; Culbertson, R. ; Mason, J. ; Bryant, D. ; Saunier, Paul
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1997
fDate
4-7 Oct. 1997
Firstpage
183
Lastpage
185
Abstract
A two-stage single-chip X-band power amplifier having an average of 8-W of pulsed output power at 33% duty cycle with 35% power-added efficiency over a 24% bandwidth has been demonstrated. The design achieves increased power and efficiency through the use of a newly developed AlGaAs/GaAs heterojunction FET pulse-doped material structure and incorporation of an off-chip matching network topology that reduces losses.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 35 percent; 8 W; AlGaAs-GaAs; HFET technology; X-band; duty cycle; heterojunction FET pulse-doped material; losses; off-chip matching network topology; power amplifier; power-added efficiency; pulsed output power; FETs; Gallium arsenide; HEMTs; High power amplifiers; MMICs; MODFETs; Power amplifiers; Pulse amplifiers; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location
Miami Beach, FL, USA
Print_ISBN
0-7803-0773-9
Type
conf
DOI
10.1109/GAAS.1992.247195
Filename
247195
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