Title :
Low damage processing of III-V devices by ECR plasma techniques
Author :
Murrell, A.J. ; Grimwood, R.C. ; O´Sullivan, P. ; Gilbert, M. ; Vanner, K. ; Ruddell, F. ; Davies, I. ; Hilton, K. ; Bland, S. ; Spear, D.
Author_Institution :
Oxford Instrum., Bristol, UK
Abstract :
Electron cyclotron resonance (ECR) plasma techniques have been used to process III-V materials with reduced electrical damage. Detailed comparisons have been made between ECR and conventional RF plasma and wet processing, through fabrication and analysis of a range of active devices. Fabrication of active devices has produced clear evidence for reduced damage compared to conventional RF plasma techniques. Both RF PECVD and ECR deposition are found to be low damage, but ECR is shown to offer advantages in certain devices. ECR etching of InP/InGaAs devices does led to some degradation, although of a lower level than that induced by reactive ion etching. GaAs MESFETs, however, show no measurable damage after ECR etching, even compared to wet etching.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; plasma CVD; sputter etching; ECR deposition; ECR etching; ECR plasma techniques; GaAs; III-V devices; III-V materials; InP-InGaAs devices; MESFET; RF PECVD; RF plasma; electrical damage; electron cyclotron resonance plasma techniques; low damage processing; reactive ion etching; wet etching; wet processing; Cyclotrons; Electrons; Fabrication; III-V semiconductor materials; Plasma applications; Plasma devices; Plasma materials processing; Radio frequency; Resonance; Wet etching;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247197