High performance and highly uniform sub-quarter micron BPLDD SAGFET with reduced source to gate spacing

Author

Shimura, T. ; Hosogi, K. ; Khono, Y. ; Sakai, M. ; Kuragaki, T. ; Shimada, M. ; Kitano, T. ; Nishitani, K. ; Otsubo, M. ; Mitsui, S.

Author_Institution

Mitsubishi Electric Corp., Hyogo, Japan

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

165

Lastpage

168

Abstract

A BPLDD SAGFET (self-aligned gate MESFET) with reduced source-to-gate spacing has been developed for high-speed GaAs LSIs. The short channel effect is drastically suppressed by reducing source-to-gate spacing to 0.2 mu m. Even for 0.2- mu m gate, the standard deviation of V/sub th/ is as small as 34 mV over a 3-in wafer. Transconductance as high as 480 mS/mm is achieved. f/sub T/ is estimated to be 85 GHz. High-performance and highly uniform subquarter-micron BPLDD SAGFETs with reduced source-to-gate spacing are very promising for ultrahigh-speed LSIs.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; large scale integration; solid-state microwave devices; 3 in; 85 GHz; self-aligned gate MESFET; semiconductor; short channel effect; source-to-gate spacing; sub-quarter micron BPLDD SAGFET; transconductance; ultrahigh speed LSI; Electrodes; Fabrication; Gallium arsenide; Ion implantation; Laboratories; Leakage current; MESFETs; Microwave devices; Semiconductor films; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247199

Filename

247199