Title :
High current/temperature stress test on metal lines and interconnections for GaAs MMICs
Author :
Magistrali, F. ; Sala, D. ; Turner, J. ; Vanner, K.
Author_Institution :
Alcatel Telettra, Vimercate, Italy
Abstract :
During a comprehensive reliability evaluation of GaAs MMICs (monolithic microwave integrated circuits), the reliability of metal lines and interconnections has been extensively investigated by applying several combinations of high temperature and current density, up to 240 degrees C and 60 MA/cm/sup 2/, respectively. Test structures included Ti/Pt/Au metallizations with various dimensions, and ohmic contacts made of AuGeIn alloy. No significant degradation of Ti/Pt/Au metals was found, while ohmic contacts showed electromigration effects at very high applied stresses; by evaluating activation energy and current density accelerating factor, these phenomena are predicted to have negligible effects in actual operating conditions.<>
Keywords :
III-V semiconductors; MMIC; circuit reliability; gallium arsenide; integrated circuit testing; metallisation; ohmic contacts; packaging; stress effects; 240 C; AuGeIn alloy; GaAs integrated circuits; MMIC; Ti-Pt-Au metallisation; activation energy; current density accelerating factor; electromigration effects; high current/temperature stress test; interconnections; metal lines; monolithic microwave integrated circuits; ohmic contacts; reliability evaluation; semiconductor; test structure; Circuit testing; Current density; Gallium arsenide; Gold; Integrated circuit reliability; MMICs; Microwave integrated circuits; Ohmic contacts; Stress; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247200
