Title :
Robust electrical characteristics of multiple-layer InAs/GaAs quantum-dot diodes under gamma irradiation
Author :
Yifei Mu ; Lam, S. ; Zhao, C.Z. ; Babazadeh, N. ; Hogg, R.A. ; Nishi, K. ; Takemasa, K. ; Sugawara, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Xi´an Jiaotong-Liverpool Univ., Suzhou, China
Abstract :
To conclude, the InAs/GaAs QD devices display radiation-tolerant DC characteristics despite high total dose of gamma radiation. No permanent ionising damage to the III-V compound semiconductor devices has been observed. The off-state leakage current is not worsened even when the device is continuously irradiated by gamma radiation. The results show great promise of InAs/GaAs QD structure for realization of IR photodetectors with low noise floor and high reliability in radiation environments.
Keywords :
III-V semiconductors; gallium arsenide; gamma-rays; indium compounds; leakage currents; photodetectors; semiconductor device noise; semiconductor device reliability; semiconductor diodes; semiconductor quantum dots; III-V compound semiconductor devices; IR photodetectors; InAs-GaAs; QD devices; gamma irradiation; off-state leakage current; quantum dot diode; Current measurement; Electrodes; Gold; Leakage currents; Radiation effects; Time measurement;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175591
