Title :
Advanced technologies of low-power GaAs ICs and power modules for cellular telephones
Author :
Ishikawa, O. ; Ota, Y. ; Maeda, M. ; Tezuka, A. ; Sakai, H. ; Katoh, T. ; Itoh, J. ; Mori, Y. ; Sagawa, M. ; Inada, M.
Author_Institution :
Matsushita Electric Ind. Co. Ltd., Osaka, Japan
Abstract :
Low-power GaAs ICs and power modules have been developed for 150-cc-type cellular telephones. The front-end IC and power splitter IC can operate under 3 V, and the dissipation current is only half that of Si bipolar ICs. The front-end IC, consisting of a low-noise amplifier, local amplifier, and downconverter, shows a conversion gain of 22 dB at a local power of -15 dBm. The power splitter IC, used in dividing the output power of the voltage-controlled oscillator and supplying the local power to two mixers, shows an output power of 0 dBm and internal isolation of over 25 dB. The power module as a transmitter, composed of a two-stage hybrid amplifier using GaAs MESFETs, can operate at 4.7 V and deliver an output power of 1.5 W at f=950 MHz.<>
Keywords :
III-V semiconductors; cellular radio; gallium arsenide; integrated circuit technology; modules; radiotelephony; 1.5 W; 22 dB; 4.7 V; 950 MHz; GaAs low power integrated circuits; MESFET; cellular telephones; conversion gain; dissipation current; downconverter; front-end IC; internal isolation; local amplifier; low-noise amplifier; output power; power modules; power splitter IC; semiconductor; transmitter; two-stage hybrid amplifier; voltage-controlled oscillator; Bipolar integrated circuits; Gain; Gallium arsenide; Low-noise amplifiers; Multichip modules; Power amplifiers; Power generation; Power supplies; Telephony; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247207
