Title :
A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier
Author :
Chen, T.H. ; Tan, K.L. ; Dow, G.S. ; Wang, H. ; Chang, K.W. ; Ton, T.N. ; Allen, B. ; Berenz, J. ; Liu, P.H. ; Streit, D. ; Hayashibara, G.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs power HEMTs (high-electron-mobility transistors) with record power and gain performance at W-band frequency. The two-stage amplifier has a small-signal gain of 9 dB and can deliver 0.1-W output power with 5.9-dB associated gain and 6.6% power-added efficiency at 93.5 GHz. The successful first pass design of the W-band MMIC (monolithic microwave integrated circuit) power amplifier is due to the superior device performance and the millimeter-wave monolithic power amplifier design techniques.<>
Keywords :
MMIC; high electron mobility transistors; microwave amplifiers; power amplifiers; 0.1 W; 9 dB; 93.5 GHz; MMIC power amplifier; W-band frequency; amplifier design techniques; first pass design; gain performance; power-added efficiency; pseudomorphic HEMT; small-signal gain; Frequency; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; MODFETs; Microwave amplifiers; Performance gain; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247220
