Title :
A highly integrated wideband millimeter wave MMIC converter using 0.25 mu m p-HEMT technology
Author :
Fudem, H. ; Moghe, S. ; Dietz, G.
Author_Institution :
Northrop Electronics Syst. Div., Rolling Meadows Site, IL, USA
Abstract :
A highly integrated wideband converter was designed to upconvert the entire 6-18-GHz input RF frequency band to a 22-GHz intermediate frequency using a 28-40-GHz local oscillator. The circuit was designed using 0.25- mu m pseudomorphic HEMT (high-electron-mobility transistor) technology. The converter incorporates a three-stage RF amplifier, a three-stage LO (local oscillator) amplifier, and an active balanced mixer, all integrated on a single chip 2440*2440 mu m in size.<>
Keywords :
MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; 0.25 micron; 22 GHz; 28 to 40 GHz; 6 to 18 GHz; active balanced mixer; local oscillator; millimeter wave MMIC converter; p-HEMT technology; pseudomorphic HEMT; three-stage LO; three-stage RF amplifier; wideband converter; Frequency conversion; Local oscillators; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Radio frequency; Radiofrequency amplifiers; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247223
