A highly integrated wideband millimeter wave MMIC converter using 0.25 mu m p-HEMT technology

Author

Fudem, H. ; Moghe, S. ; Dietz, G.

Author_Institution

Northrop Electronics Syst. Div., Rolling Meadows Site, IL, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

59

Lastpage

62

Abstract

A highly integrated wideband converter was designed to upconvert the entire 6-18-GHz input RF frequency band to a 22-GHz intermediate frequency using a 28-40-GHz local oscillator. The circuit was designed using 0.25- mu m pseudomorphic HEMT (high-electron-mobility transistor) technology. The converter incorporates a three-stage RF amplifier, a three-stage LO (local oscillator) amplifier, and an active balanced mixer, all integrated on a single chip 2440*2440 mu m in size.<>

Keywords

MMIC; field effect integrated circuits; frequency convertors; high electron mobility transistors; 0.25 micron; 22 GHz; 28 to 40 GHz; 6 to 18 GHz; active balanced mixer; local oscillator; millimeter wave MMIC converter; p-HEMT technology; pseudomorphic HEMT; three-stage LO; three-stage RF amplifier; wideband converter; Frequency conversion; Local oscillators; MMICs; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Radio frequency; Radiofrequency amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247223

Filename

247223