Title :
Advanced materials and structures for high power wide bandgap devices
Author :
Shaddock, David ; Meyer, Laura ; Tucker, Jesse ; Dasgupta, Samhita ; Fillion, Raymond ; Bronecke, Peter ; Yorinks, Leonard ; Kraft, Phillip
Author_Institution :
GE Global Res. Center, Niskayuna, NY, USA
Abstract :
Wide bandgap devices have advantages over silicon in regard to thermal performance. These advantages include both high temperature device operation and high substrate thermal conductivity. The focus of this work is on materials applicable to wide bandgap, high power device packaging. Similar challenges are found in optoelectronic packaging. Modeling and testing results are presented.
Keywords :
microwave devices; power semiconductor devices; semiconductor device measurement; semiconductor device models; semiconductor device packaging; silicon compounds; thermal conductivity; thermal management (packaging); thermal resistance; wide band gap semiconductors; SiC; SiC microwave power devices; high power wide bandgap devices; high substrate thermal conductivity; high temperature device operation; power device packaging; thermal resistance; wide bandgap materials; Conducting materials; Gallium arsenide; Gallium nitride; Photonic band gap; Semiconductor device packaging; Semiconductor devices; Silicon carbide; Substrates; Temperature dependence; Thermal conductivity;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2003. Ninteenth Annual IEEE
Print_ISBN :
0-7803-7793-1
DOI :
10.1109/STHERM.2003.1194337
