A fully integrated monolithic D-band oscillator-doubler chain using InP-based HEMTs

Author

Kwon, Y. ; Pavlidis, D. ; Marsh, P. ; Ng, G.I. ; Brock, T. ; Munns, G. ; Haddad, G.I.

Author_Institution

Michigan Univ., Ann Abor, MI, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

51

Lastpage

54

Abstract

The experimental characteristics of a monolithic D-band oscillator-doubler chain are reported, together with the design, monolithic integrated circuit (MMIC) implementation, and testing. The circuits were fabricated using submicron (0.1- mu m) InAlAs/InGaAs high-electron-mobility transistors (HEMTs) and had on-chip bias stabilization circuitry and an integrated E-field probe for direct radiation into the waveguide. The oscillation signal was detected over a frequency range of 130.5 GHz to 132.8 GHz with an output power of -12 dBm for designs with small-gate-periphery (45- mu m) HEMTs.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; frequency multipliers; gallium arsenide; high electron mobility transistors; indium compounds; microwave oscillators; 130.5 to 132.8 GHz; InAlAs-InGaAs; MMIC; direct radiation; high-electron-mobility transistors; integrated E-field probe; monolithic D-band oscillator-doubler chain; on-chip bias stabilization circuitry; oscillation signal; output power; small-gate-periphery; Circuit testing; HEMTs; Indium compounds; Indium gallium arsenide; Integrated circuit testing; MMICs; MODFETs; Monolithic integrated circuits; Probes; Signal detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247225

Filename

247225