Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

Author

Wang, H. ; Chang, K.W. ; Chen, T.H. ; Tan, K.L. ; Dow, G.S. ; Allen, B. ; Berenz, J.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

47

Lastpage

50

Abstract

Monolithic W-band voltage control oscillators (VCOs) have been developed based on 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low noise and power high-electron-mobility transistor (HEMT) technologies. An output power of 7.6 dBm at 92 GHz was obtained by using the low-noise HEMT, and 8.8 dBm was obtained at 90.5 GHz by using the power HEMT without any tuning on the matching structures. These VCOs can also be integrated with other W-band monolithic components using the same device technology. The success of this development makes possible the high-level integration of multifunctional monolithic microwave integrated circuit (MMIC) chips at W-band frequencies for various applications, such as monolithic receivers with local-oscillator chain, and single-chip transceivers in FMCW systems.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; variable-frequency oscillators; 90.5 GHz; 92 GHz; AlGaAs-InGaAs-GaAs; HEMTs; W-band VCOs; high-electron-mobility transistor; high-level integration; local-oscillator chain; matching structures; multifunctional monolithic microwave integrated circuit; output power; single-chip transceivers; Circuit optimization; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Power generation; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247226

Filename

247226