Near fiatband mode currents evaluated by one-particle self-consistent calculations

In a compact model, an off-state current involving a recursive calculation of one-particle self-consistent (SC) potential does not vanish over a metal gate/insulators/semiconductor (MIS) structure of ultra-low temperature (<; 4.5°K) metal-oxide-semiconductor field-effect transistor (ULTMOSFET). When operating the ULTMOSFET in the near flatband mode, the SC potential calculation relying on SC Schrödinger-Poisson pair equations extracts both potential well width and triangular energy eigenvalues for bound states. A new calculation of one-particle SC currents is proposed to predict the current phenomena measured from the ULTMOSFET device.