Title :
A D-band monolithic low noise amplifier
Author :
Wang, H. ; Ton, T.N. ; Tan, K.L. ; Garske, D. ; Dow, G.S. ; Berenz, J. ; Pospieszalski, M.W. ; Pan, S.K.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A D-band monolithic two-stage low-noise amplifier (LNA) has been developed using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise high-electron-mobility transistor (HEMT) technology. The amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low noise figure. The monolithic LNA is a first-part success without any tuning on the matching structures. To the authors´ knowledge, this is the first reported monolithic amplifier operating above 100 GHz using three terminal devices.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 10 dB; 112 to 115 GHz; 12 dB; 5.5 dB; 6.3 dB; AlGaAs-InGaAs-GaAs; D-band monolithic low noise amplifier; III-V semiconductors; low-noise HEMT technology; monolithic amplifier; three terminal devices; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MMICs; Noise figure; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247231
