Improved MESFET characterization for analog circuit design and analysis

Author

Parker, A.E. ; Skellern, D.J.

Author_Institution

Sch. of Math. Phys. Comput. & Electron., Macquarie Univ., Sydney, NSW, Australia

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

225

Lastpage

228

Abstract

The third derivative of MESFET drain current behavior is useful for devise characterization. It provides information necessary to device a model to predict large-signal dynamic behavior with accuracy over an extended range of operating conditions. Extra parameters are proposed to define behavior in subthreshold and triode operating regions. A continuously differentiable form that models third-order behavior correctly describes these regions. The result is an accurate large-signal model suitable for design and analysis of distortion and intermodulation in analog circuits.<>

Keywords

Schottky gate field effect transistors; analogue circuits; electric distortion; intermodulation; semiconductor device models; MESFET characterization; analog circuit design; analogue circuit analysis; devise characterization; distortion; drain current behavior; intermodulation; large-signal dynamic behavior; large-signal model; subthreshold region; third-order behavior; triode operating regions; Analog circuits; Analog computers; Circuit analysis; Equations; Frequency; Intermodulation distortion; MESFET circuits; Mathematics; Physics; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247262

Filename

247262