Title :
Improved MESFET characterization for analog circuit design and analysis
Author :
Parker, A.E. ; Skellern, D.J.
Author_Institution :
Sch. of Math. Phys. Comput. & Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
The third derivative of MESFET drain current behavior is useful for devise characterization. It provides information necessary to device a model to predict large-signal dynamic behavior with accuracy over an extended range of operating conditions. Extra parameters are proposed to define behavior in subthreshold and triode operating regions. A continuously differentiable form that models third-order behavior correctly describes these regions. The result is an accurate large-signal model suitable for design and analysis of distortion and intermodulation in analog circuits.<>
Keywords :
Schottky gate field effect transistors; analogue circuits; electric distortion; intermodulation; semiconductor device models; MESFET characterization; analog circuit design; analogue circuit analysis; devise characterization; distortion; drain current behavior; intermodulation; large-signal dynamic behavior; large-signal model; subthreshold region; third-order behavior; triode operating regions; Analog circuits; Analog computers; Circuit analysis; Equations; Frequency; Intermodulation distortion; MESFET circuits; Mathematics; Physics; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247262
