Title :
Thermal characterization of high speed DDR devices in system environments [DRAM modules]
Author :
Baek, Joonghyun ; So, Byungse ; Lee, Taekoo ; Im, Yunhyeok ; Oh, Seyong
Author_Institution :
Samsung Electronics Co., Ltd. Gyeonggi-Do, South Korea
Abstract :
This paper studies the thermal characteristics of various memory modules for desktop and server systems. Using a CFD (computational fluid dynamics) simulator, we simulated these modules to predict their junction temperature. A detailed simulation model and power calculation procedures are described. Simulation results are provided for different conditions and parameter variations. Also, thermal measurements of these modules were carried out in real systems. The simulation and measured data were compared, and the results proved that the simulation model was sufficiently accurate for use in memory subsystem thermal design. Using the proposed simulation model of these modules and analysis results, the minimum requirements were defined for avoiding thermal problems in newly designed memory modules.
Keywords :
DRAM chips; computational fluid dynamics; integrated circuit measurement; integrated circuit modelling; modules; temperature measurement; thermal analysis; thermal management (packaging); CFD simulation; DDR DRAM modules; computational fluid dynamics; desktop systems; double data rate DRAM; high speed DDR device thermal characterization; junction temperature prediction; memory modules; memory subsystem thermal design; power calculation procedures; server systems; Chip scale packaging; Computational modeling; Electronic packaging thermal management; Electronics packaging; Fluid dynamics; Guidelines; Power system modeling; Predictive models; Random access memory; Temperature;
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 2003. Ninteenth Annual IEEE
Print_ISBN :
0-7803-7793-1
DOI :
10.1109/STHERM.2003.1194352
