DocumentCode :
3388991
Title :
Structural origins of electrical asymmetries of ZnO vertical thin film transistors
Author :
Sun, Kaige G. ; Nelson, Shelby F. ; Jackson, Thomas N.
Author_Institution :
Center for Thin Film Devices, Mater. Res. Inst., USA
fYear :
2015
fDate :
21-24 June 2015
Firstpage :
197
Lastpage :
198
Abstract :
Summary form only given. Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.
Keywords :
III-VI semiconductors; atomic layer deposition; carrier mobility; current density; electrodes; photolithography; semiconductor device models; thin film transistors; wide band gap semiconductors; zinc compounds; 3D device structure; SALD; Synopsys Sentaurus drift-diffusion simulator; VTFT; ZnO; asymmetric saturation-region current-voltage characteristics; current density; drain electrodes; electrical asymmetries; electrical behavior; high-resolution photolithography; nanometer-scale features; physics-based 2D model; spatial atomic layer deposition; submicron channel length; transistor source; vertical thin film transistors; Boats; Glass; II-VI semiconductor materials; Logic gates; Substrates; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
Type :
conf
DOI :
10.1109/DRC.2015.7175631
Filename :
7175631
Link To Document :
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