• DocumentCode
    3389092
  • Title

    A manufacturable high performance 0.1- mu m pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs

  • Author

    Tan, K.L. ; Liu, P.H. ; Streit, D.C. ; Dia, R. ; Han, A.C. ; Freudenthal, A. ; Velebir, J. ; Stolt, K. ; Lee, J. ; Bidenbender, M. ; Lai, R. ; Wang, H. ; Allen, B.

  • Author_Institution
    TRW, Redondo Beach, CA, USA
  • fYear
    1997
  • fDate
    4-7 Oct. 1997
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    A reproducible and high-performance 0.1- mu m pseudomorphic InGaAs HEMT (high-electron-mobility transistor) MMIC (monolithic microwave integrated circuit) process for W-band MMIC fabrication has been developed. The process has been transferred to production and will offer low-cost/high-volume production of W-band MMICs for both military and commercial applications. In developing this process, emphasis was placed on achieving high producibility without compromising the device performance necessary for successful implementation of W-band circuits. The authors present details of the process, device performance, examples from over 25 W-band MMICs fabricated to date, and the resulting process transfer to a flexible manufacturing line.<>
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit manufacture; 0.1 micron; AlGaAs-InGaAs; HEMT process; MMIC fabrication; W-band MMICs; flexible manufacturing line; high-electron-mobility transistor; high-volume production; low cost production; monolithic microwave integrated circuit; pseudomorphic device process; Fabrication; Flexible manufacturing systems; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Manufacturing processes; Microwave integrated circuits; Monolithic integrated circuits; Production;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
  • Conference_Location
    Miami Beach, FL, USA
  • Print_ISBN
    0-7803-0773-9
  • Type

    conf

  • DOI
    10.1109/GAAS.1992.247268
  • Filename
    247268