A high efficiency 0.25 mu m pseudomorphic HEMT power process

Author

Danzilio, D. ; White, P. ; Hanes, L.K. ; Lauterwasser, B. ; Ostrowski, B. ; Rose, F.

Author_Institution

Raytheon Co., Andover, MA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

255

Lastpage

257

Abstract

A high-efficiency power process based on a 0.25- mu m pseudomorphic HEMT (high-electron-mobility transistor) has been developed that consistently demonstrates state-of-the-art performance at X- through Ku-band frequencies. Discrete 1.2-mm transistors operating at 18 GHz have simultaneously demonstrated over 28.9 dBm (776 mW) output power with over 6.0 dB of associated gain and 53% power added efficiency. This combination of high power added efficiency, gain, and output power coupled with very versatile performance characteristics makes these devices suitable for a wide range of monolithic microwave integrated circuit applications. The high yield fabrication process is well suited for volume production and is currently being used for high-efficiency amplifiers through Ku-band.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; integrated circuit manufacture; power integrated circuits; power transistors; 0.25 micron; 18 GHz; 53 percent; 6 dB; 776 mW; Ku-band; X-band; high yield fabrication process; high-efficiency power process; high-electron-mobility transistor; monolithic microwave integrated circuit; pseudomorphic HEMT power process; volume production; Application specific integrated circuits; Coupling circuits; Frequency; HEMTs; MODFETs; Microwave devices; PHEMTs; Performance gain; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247269

Filename

247269