DocumentCode
3389168
Title
A novel translinear principle based BiMOS transconductor
Author
Kiran, S. Pradeep ; Rao, K. Radhakrishna
Author_Institution
Texas Instrum. India Ltd., Bangalore, India
fYear
1998
fDate
4-7 Jan 1998
Firstpage
161
Lastpage
166
Abstract
A transconductor that exploits the square law relation of the FET in conjunction with the translinear relation for the bipolar transistors is proposed. Linear output is achieved by taking the square root of the drain current. Simulation results of the transconductor are given
Keywords
BIMOS integrated circuits; analogue processing circuits; nonlinear network analysis; BiMOS transconductor; analogue processing circuits; bipolar transistors; drain current; square law relation; square root; translinear principle; translinear relation; Circuit simulation; Circuit synthesis; Cutoff frequency; FETs; Gallium arsenide; MOSFETs; Power supplies; Transconductors; Variable structure systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 1998. Proceedings., 1998 Eleventh International Conference on
Conference_Location
Chennai
ISSN
1063-9667
Print_ISBN
0-8186-8224-8
Type
conf
DOI
10.1109/ICVD.1998.646596
Filename
646596
Link To Document