Title :
Monitoring the base and emitter resistances in an AlGaAs/GaAs HBT line
Author_Institution :
Tektronix, Beaverton, OR, USA
Abstract :
A simple method of monitoring the base and emitter resistances of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) at a given bias is described. This method can also be used to measure the collector capacitance. This does not require any special device structures. No additional measurements are necessary, since it is a part of f/sub T/ measurement. In addition to process control, this allows monitoring of model parameter of the device from run to run.<>
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; capacitance measurement; electric resistance measurement; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; monitoring; semiconductor device models; semiconductor device testing; AlGaAs-GaAs; HBT line; base resistance; collector capacitance; emitter resistances; f/sub T/ measurement; heterojunction bipolar transistors; model parameter; monitoring; process control; Capacitance; Conductivity; Contact resistance; Electrical resistance measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Monitoring; Process control; Scattering parameters;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-0773-9
DOI :
10.1109/GAAS.1992.247273
