Monitoring the base and emitter resistances in an AlGaAs/GaAs HBT line

Author

Prasad, S.J.

Author_Institution

Tektronix, Beaverton, OR, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

271

Lastpage

274

Abstract

A simple method of monitoring the base and emitter resistances of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) at a given bias is described. This method can also be used to measure the collector capacitance. This does not require any special device structures. No additional measurements are necessary, since it is a part of f/sub T/ measurement. In addition to process control, this allows monitoring of model parameter of the device from run to run.<>

Keywords

III-V semiconductors; S-parameters; aluminium compounds; capacitance measurement; electric resistance measurement; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; monitoring; semiconductor device models; semiconductor device testing; AlGaAs-GaAs; HBT line; base resistance; collector capacitance; emitter resistances; f/sub T/ measurement; heterojunction bipolar transistors; model parameter; monitoring; process control; Capacitance; Conductivity; Contact resistance; Electrical resistance measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Monitoring; Process control; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247273

Filename

247273