Radio frequency transistors and circuit applications based on CVD MoS2

Summary form only given. Molybdenum disulfide (MoS₂), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ~1.8 eV for single layers. Its bandgap allows for high I_on/I_off metal-oxide semiconducting field-effect transistors (FETs). Exfoliated monolayer MoS₂ FETs exhibit current saturation with on-state current densities of 300 μA/μm, as well as transconductances exceeding 40 μS/μm [1]. These properties make MoS₂ a desirable candidate for radio frequency (RF) applications [1, 2, 3]. However, in order for MoS₂ devices to move from laboratory experimentations to industrial scale applications, large area synthesis of high quality material is needed. Here we demonstrate gigahertz RF performance and circuits (amplifier and mixer) using chemical vapor deposited (CVD) monolayer MoS₂ FETs.