Title :
Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM
Author :
Sunghun Jung ; Sungjun Kim ; Jeong-Hoon Oh ; Kyung-Chang Ryoo ; Jong-Ho Lee ; Hyungcheol Shin ; Byung-Gook Park
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
The conduction mechanism in Ti/Si3N4/p-Si memory stack is described. In order to analyze the conduction mechanism, we measured the I-V characteristics in voltage sweep mode and conducted I-V curve fitting. And the temperature dependence in Ti/Si3N4/p-Si stacked cell is also investigated because we cannot claim the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we found that space charge limited conduction (SCLC) model is well fitted in both high resistance state (HRS) and low resistance state (LRS).
Keywords :
curve fitting; random-access storage; silicon compounds; space charge; temperature measurement; titanium; HRS; I-V characteristics; I-V curve fitting; LRS; RRAM; SCLC model; TiSi3N4Si; conduction mechanism; high resistance state; low resistance state; memory stack; space charge limited conduction model; temperature dependence; temperature measurement data; voltage sweep mode; Conferences; Decision support systems; Nanoelectronics; RRAM; conduction mechanism and Si3N4);
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465965
