Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM

Author

Sunghun Jung ; Sungjun Kim ; Jeong-Hoon Oh ; Kyung-Chang Ryoo ; Jong-Ho Lee ; Hyungcheol Shin ; Byung-Gook Park

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

97

Lastpage

99

Abstract

The conduction mechanism in Ti/Si₃N₄/p-Si memory stack is described. In order to analyze the conduction mechanism, we measured the I-V characteristics in voltage sweep mode and conducted I-V curve fitting. And the temperature dependence in Ti/Si₃N₄/p-Si stacked cell is also investigated because we cannot claim the conduction mechanism just based on the I-V curve fitting. From I-V curve fitting and temperature measurement data, we found that space charge limited conduction (SCLC) model is well fitted in both high resistance state (HRS) and low resistance state (LRS).

Keywords

curve fitting; random-access storage; silicon compounds; space charge; temperature measurement; titanium; HRS; I-V characteristics; I-V curve fitting; LRS; RRAM; SCLC model; TiSi₃N₄Si; conduction mechanism; high resistance state; low resistance state; memory stack; space charge limited conduction model; temperature dependence; temperature measurement data; voltage sweep mode; Conferences; Decision support systems; Nanoelectronics; RRAM; conduction mechanism and Si3N4);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465965

Filename

6465965