Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loads

Author

Kobayashi, K.W. ; Umemoto, D.K. ; Velebir, J.R. ; Streit, D.C. ; Oki, A.K.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1997

fDate

4-7 Oct. 1997

Firstpage

313

Lastpage

316

Abstract

The authors report the first microwave results on complementary heterojunction bipolar transistor (HBT) amplifiers which integrate both NPN and PNP devices on the same chip using selective molecular beam epitaxy. An HBT wideband amplifier utilizing the Darlington configuration and implementing a PNP active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; wideband amplifiers; 0 to 2.5 GHz; 2.5 GHz; 7.5 dB; Darlington amplifiers; MBE; PNP active loads; UHF; complementary HBT; heterojunction bipolar transistor; push-pull; selective molecular beam epitaxy; wideband amplifier; Broadband amplifiers; Circuits; Doping profiles; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Microwave technology; Molecular beam epitaxial growth; Optical amplifiers; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1992. Technical Digest 1992., 14th Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-0773-9

Type

conf

DOI

10.1109/GAAS.1992.247281

Filename

247281