Title :
Diagnostics of laser evaporated Al in NH3 atmosphere [AlN deposition]
Author :
Mele, A. ; Guidoni, A. Giardini ; Palma, T. M Di ; Teghil, R. ; Orlando, S.
Author_Institution :
Dipartimento di Chimica, Rome Univ., Italy
Abstract :
The authors report results of the preparation of AlN films obtained by diagnostics of the reaction of laser evaporated Al with NH/sub 3/. The films fabricated by this method have been characterized by Auger, EDX, scanning electron microscopy (SEM), and X-ray diffraction spectra.
Keywords :
Auger effect; III-V semiconductors; X-ray chemical analysis; X-ray diffraction; aluminium compounds; pulsed laser deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; Al; AlN; AlN films; Auger spectra; EDX; NH/sub 3/; NH/sub 3/ atmosphere; SEM; X-ray diffraction; diagnostics; laser evaporated Al; preparation; scanning electron microscopy; Aluminum; Gas lasers; Laser ablation; Optical device fabrication; Optical imaging; Optical refraction; Pulsed laser deposition; Scanning electron microscopy; Semiconductor materials; Spectroscopy;
Conference_Titel :
Advanced Applications of Lasers in Materials Processing/Broadband Optical Networks/Smart Pixels/Optical MEMs and Their Applications. IEEE/LEOS 1996 Summer Topical Meetings:
Conference_Location :
Keystone, CO, USA
Print_ISBN :
0-7803-3175-3
DOI :
10.1109/LEOSST.1996.540680
