Role of low-temperature-grown GaAs substrate of photoconductive antenna in broadband terahertz time domain spectroscopy

Author

Shimosato, H. ; Katayama, I. ; Saito, S. ; Ashida, M. ; Itoh, T. ; Kadoya, Y. ; Sakai, K.

Author_Institution

Grad. Sch. of Eng. Sci., Osaka Univ., Toyonaka

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

484

Lastpage

485

Abstract

We have investigated the detection performance of photoconductive antennas fabricated on low-temperature-grown GaAs substrate. We compared terahertz waves detected with antennas annealed at different temperatures in terahertz time domain spectroscopy. The signal detected with the antenna annealed at higher temperature showed stronger intensity. On the other hand, the spectrum detected with the antenna annealed at lower temperature showed broader bandwidth.

Keywords

dipole antennas; photoconducting devices; semiconductor growth; submillimetre wave antennas; submillimetre wave spectroscopy; GaAs; broadband terahertz time domain spectroscopy; photoconductive antenna; Annealing; Bandwidth; Broadband antennas; Detectors; Dipole antennas; Gallium arsenide; Photoconductivity; Spectroscopy; Substrates; Temperature; Annealing; Dipole antennas; Infrared spectroscopy; Semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516593

Filename

4516593