Title :
A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration
Author :
Taghvaei, M.A. ; Cicek, P.-V. ; Allidina, K. ; Nabki, F. ; El-Gamal, M.N.
Author_Institution :
McGill Univ., Montreal, QC, Canada
fDate :
May 30 2010-June 2 2010
Abstract :
This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sensor operates in the pressure range from 10 to 1200 mbar with a resolution of ~2 mbar. The system is temperature-compensated between -10°C and 60°C. The simulated power consumption of the entire system is less than 495 μW from a 1 V supply.
Keywords :
CMOS integrated circuits; compensation; micromechanical resonators; monolithic integrated circuits; operational amplifiers; pressure sensors; CMOS compatible process; MEMS based temperature compensated vacuum sensor; MEMS resonator based vacuum sensor; low power monolithic integration; mixer based frequency to digital converter; power consumption; pressure 10 mbar to 1200 mbar; size 130 nm; temperature -10 degC to 60 degC; transimpedance amplifier; CMOS process; CMOS technology; Circuit simulation; Digital-to-frequency converters; Energy consumption; Frequency conversion; Integrated circuit technology; Micromechanical devices; Monolithic integrated circuits; Temperature sensors;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537914
