A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration

Author

Taghvaei, M.A. ; Cicek, P.-V. ; Allidina, K. ; Nabki, F. ; El-Gamal, M.N.

Author_Institution

McGill Univ., Montreal, QC, Canada

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

3276

Lastpage

3279

Abstract

This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sensor operates in the pressure range from 10 to 1200 mbar with a resolution of ~2 mbar. The system is temperature-compensated between -10°C and 60°C. The simulated power consumption of the entire system is less than 495 μW from a 1 V supply.

Keywords

CMOS integrated circuits; compensation; micromechanical resonators; monolithic integrated circuits; operational amplifiers; pressure sensors; CMOS compatible process; MEMS based temperature compensated vacuum sensor; MEMS resonator based vacuum sensor; low power monolithic integration; mixer based frequency to digital converter; power consumption; pressure 10 mbar to 1200 mbar; size 130 nm; temperature -10 degC to 60 degC; transimpedance amplifier; CMOS process; CMOS technology; Circuit simulation; Digital-to-frequency converters; Energy consumption; Frequency conversion; Integrated circuit technology; Micromechanical devices; Monolithic integrated circuits; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5537914

Filename

5537914