• DocumentCode
    3389662
  • Title

    Defect level prediction using multi-model fault coverage

  • Author

    Lu, Shyue-Kung ; Lee, Tsung-Ying ; Wu, Cheng-Wen

  • Author_Institution
    Dept. of Electron. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    301
  • Lastpage
    306
  • Abstract
    Continuous progress in VLSI technologies keeps reducing the defect density. However; a yield of 100% is considered unlikely. It is also known that VLSI circuits can never be “completely” tested. Therefore, defect level cannot be reduced to zero. The quality of a test is usually evaluated by the fault coverage. The relationship between the defect level and the fault coverage has never been proposed. In this paper; we first propose the concept of multi-model fault coverage (MFC) instead of the fault coverage based on a unique fault model. The relationship between defect level, fabrication yield, and multi-model fault coverage is then derived. We also analyze the defect level error between the predicted defect level and the physical defect level. As the number of fault models used increases, the defect level error can be reduced significantly. Our approach is very effective for product quality prediction and the concept of multi-model fault coverage is very useful for today´s system-on-chip technology
  • Keywords
    VLSI; fault diagnosis; integrated circuit testing; integrated circuit yield; production testing; VLSI technologies; defect density; defect level error; defect level prediction; fabrication yield; multi-model fault coverage; physical defect level; predicted defect level; product quality prediction; system-on-chip technology; Circuit faults; Circuit testing; Fabrication; System-on-a-chip; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium, 1999. (ATS '99) Proceedings. Eighth Asian
  • Conference_Location
    Shanghai
  • ISSN
    1081-7735
  • Print_ISBN
    0-7695-0315-2
  • Type

    conf

  • DOI
    10.1109/ATS.1999.810767
  • Filename
    810767