DocumentCode
3389703
Title
Analysis of power switching devices and power electronics circuits using two-dimensional device models
Author
Ise, T. ; Murakami, Y.
Author_Institution
Osaka Univ., Japan
fYear
1992
fDate
1992
Firstpage
161
Lastpage
164
Abstract
Two-dimensional device model based simulation of power MOSFETs and of power electronics circuits are presented. In order to develop MOSFETs with lower on-resistance at the low temperature region around 80 K device characteristics of a MOSFET for various temperature were examined. Simulated drain characteristics showed good agreement with experimental results. Circuit simulation using two-dimensional device models needs more computation time and memories than the simulation using equivalent circuit models for switching devices such as SPICE type device models.
Keywords
circuit analysis computing; digital simulation; insulated gate field effect transistors; power electronics; power transistors; semiconductor device models; 80 K; MOSFET; circuit simulation; drain characteristics; power electronics circuits; power switching devices; two-dimensional device models; Active appearance model; Circuit analysis; Circuit simulation; Computational modeling; Equations; MOSFETs; Power engineering and energy; SPICE; Switching circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 1992., IEEE Workshop on
Conference_Location
Berkeley, CA, USA
Print_ISBN
0-7803-0920-0
Type
conf
DOI
10.1109/CIPE.1992.247304
Filename
247304
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