Title :
Magnetic and leakage current properties of Bi1−xGdxFeO3 thin films
Author :
Ming-Cheng Kao ; Hone-Zern Chen ; San-Lin Young
Author_Institution :
Dept. of Electron. Eng., Hsiuping Univ. of Sci. & Technol., Taichung, Taiwan
Abstract :
Bi0.9Gd0.1FeO3 (BGFO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates using the sol-gel method. The thin films showed ferromagnetic properties with remnant magnetization (Mr) of 1.2 emu/g and saturation magnetization (Ms) of 5.3 emu/g. It was found that more than one conduction mechanism is involved in the electric field range used in these experiments. In the low electric field region, the leakage current was controlled by Poole-Frenkel emission. On the other hand, the mechanism can be explained by Schottky emission from the Pt electrode in the high field region.
Keywords :
Poole-Frenkel effect; Schottky effect; bismuth compounds; ferrites; ferromagnetic materials; gadolinium compounds; leakage currents; magnetic thin films; remanence; sol-gel processing; Bi0.9Gd0.1FeO3; Poole-Frenkel emission; Pt-Ti-SiO2-Si; Schottky emission; electric field; ferromagnetic properties; leakage current properties; magnetic properties; remnant magnetization; saturation magnetization; sol-gel method; thin films; Annealing; Bismuth; Electric fields; Leakage current; Magnetic hysteresis; Saturation magnetization; Temperature measurement; Bismuth ferrite; Leakage current; Magnetic;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6465989
