InxGa1−xSb n-channel MOSFET: Effect of interface states on C-V characteristics

Author

Islam, Md Shariful ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2013

fDate

2-4 Jan. 2013

Firstpage

197

Lastpage

200

Abstract

The Capacitance-Voltage (CV) characteristics of InGaSb based n-MOSFET are investigated by quantum mechanical calculation solving 1D self-consistent Schrodinger-Poisson equation using Silvaco´s ATLAS device simulation package. The charge density profile is determined by wave function penetration effect within the oxide layer and Neuman boundary condition. Low and high frequency CV characteristics are studied both for the positive and negative interface charge densities. The results obtained from the simulation demonstrate that the CV characteristics are not so sensitive in the shift of threshold voltage for high frequency operation. On the other hand, a significant shift in threshold voltage is noticed for the low frequency operation and the shift is entirely depends on the density of interface charge density and its type.

Keywords

III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; gallium compounds; indium compounds; 1D self-consistent Schrodinger-Poisson equation; C-V characteristics; InGaSb; Neuman boundary condition; Silvaco ATLAS device simulation package; capacitance-voltage characteristics; charge density profile; interface charge density; interface state effect; n-channel MOSFET; oxide layer; positive-negative interface charge densities; quantum mechanical calculation; wave function penetration effect; Hafnium; Interface states; Logic gates; MOSFET circuits; Materials; Mathematical model; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2013 IEEE 5th International

Conference_Location

Singapore

ISSN

2159-3523

Print_ISBN

978-1-4673-4840-9

Electronic_ISBN

2159-3523

Type

conf

DOI

10.1109/INEC.2013.6465996

Filename

6465996