High resolution CD-SEM system

Author

Ose, Yoichi ; Ezumi, Makoto ; Todokoro, Hideo

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1999

fDate

1999

Firstpage

383

Lastpage

388

Abstract

Because of rapidly decreasing line-width of integrated circuits, it is necessary to measure and control their critical dimensions with high accuracy. We have developed a new critical-dimension-measurement scanning electron microscope (CD-SEM) S-9000 series, which has a new electron optics with retarding and boosting electric fields. To optimize the boosting voltage we have developed optics simulators that are capable of computing aberration coefficients and secondary electron detection efficieny in electric and magnetic mixed fields. At the optimized boosting voltage of around 5 kV for a final accelerating voltage of 800 V, not only 3 nm resolution but also highlighted bottom imaging of high aspect ratio contact holes is obtained

Keywords

aberrations; electron beam lithography; electron optics; integrated circuit measurement; scanning electron microscopy; 5 kV; 800 V; CD-SEM system; S-9000 series; aberration coefficients; aspect ratio; boosting electric fields; critical dimensions; electron optics; final accelerating voltage; highlighted bottom imaging; line-width; mixed fields; optics simulators; resolution; retarding electric fields; scanning electron microscope; secondary electron detection efficiency; Boosting; Circuit simulation; Computational modeling; Electron optics; Integrated circuit measurements; Magnetic field measurement; Optical computing; Optical microscopy; Scanning electron microscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 1999. (ATS '99) Proceedings. Eighth Asian

Conference_Location

Shanghai

ISSN

1081-7735

Print_ISBN

0-7695-0315-2

Type

conf

DOI

10.1109/ATS.1999.810779

Filename

810779