Title :
BSIM-IMG: Compact model for RF-SOI MOSFETs
Author :
Kushwaha, Pragya ; Agarwal, Harshit ; Khandelwal, Sourabh ; Duarte, Juan-Pablo ; Medury, Aditya ; Chenming Hu ; Chauhan, Yogesh S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide frequency range from 100KHz-8.5GHz.
Keywords :
MOSFET; S-parameters; semiconductor device models; silicon-on-insulator; BSIM-IMG model; RF capabilities; RF-SOI MOSFET; experimental S-parameter data; frequency 100 kHz to 8.5 GHz; independent double gate MOSFET; industry standard compact model; robust compact model; Logic gates; MOSFET; Radio frequency; Semiconductor device modeling; Silicon; Switches;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175688
