Title :
QML qualified 256 K radiation-hardened CMOS SRAM
Author :
Brown, R. ; Damato, J. ; Haddad, N. ; Posey, B. ; Scott, T. ; Murrill, S. ; Groseth, J. ; McGregor, S.
Author_Institution :
IBM Federal Syst. Co., Manassas, VA, USA
Abstract :
The IBM 256 K SRAM is a high-performance, low-power device designed and fabricated in 0.8- mu m Enhanced Radiation-Hardened CMOS technology (RHCMOS-E). It is organized in a 32 K*8 or 256 K*1 configuration and is available with either CMOS or TTL input receivers. The device was developed to satisfy future space application requirements. Radiation testing indicates that the device meets or exceeds all program requirements, while continuing to meet performance requirements. The 256 K RH SRAM has received QML qualifications is in full production, and has been delivered for use in space applications.
Keywords :
CMOS integrated circuits; SRAM chips; aerospace instrumentation; aerospace simulation; integrated circuit testing; military equipment; radiation hardening (electronics); 0.8 micron; 256 kbit; QML qualifications; RHCMOS-E technology; TTL input receivers; high-performance; low-power device; military application; performance requirements; radiation-hardened CMOS SRAM; space application; CMOS technology; Circuit simulation; Laboratories; Production; Radiation hardening; Random access memory; Single event upset; Space technology; Temperature sensors; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1992. Workshop Record., 1992 IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-0930-8
DOI :
10.1109/REDW.1992.247321
