DocumentCode :
3390027
Title :
Ink-jet printed In-Ga-Zn oxide nonvolatile TFT memory utilizing silicon nanocrystals embedded in SiO2 gate dielectric
Author :
Wang, Yannan ; Chen, T.P. ; Sun, X.W. ; Wong, J.I. ; Yang, H.Y. ; Zhao, J.L.
Author_Institution :
Sch. of EEE, Technol. Univ., Singapore, Singapore
fYear :
2013
fDate :
2-4 Jan. 2013
Firstpage :
222
Lastpage :
225
Abstract :
A nonvolatile memory based on ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistor with bottom gate bottom contact architecture is reported. The memory device contains SiO2 gate dielectric layer embedded with silicon nanocrystals, which act as charge trapping sites. Memory effects were observed by a clockwise loop in Vgs-Id curves, which is attributed to the charging and discharging of the silicon nanocrystals. The printed IGZO memory exhibits a high (about 1 × 103) on/off ratio.
Keywords :
dielectric materials; gallium; indium; ink jet printing; nanostructured materials; random-access storage; semiconductor thin films; silicon compounds; thin film transistors; zinc; In-Ga-Zn; Si; SiO2; bottom gate bottom contact architecture; charge trapping sites; clockwise loop; gate dielectric layer; ink-jet printed IGZO thin film transistor; ink-jet printed oxide nonvolatile TFT memory; memory device; memory effects; silicon nanocrystals; Ink jet printing; Logic gates; Nanocrystals; Nonvolatile memory; Silicon; Thin film transistors; Threshold voltage; In-Ga-Zn oxide; ink-jet printing; nonvolatile memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
ISSN :
2159-3523
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
Type :
conf
DOI :
10.1109/INEC.2013.6466004
Filename :
6466004
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3390027
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