Title :
1 mu m CMOS gate array radiation hardened technology
Author :
Owens, Alexander H. ; Yee, Abraham ; Toutounchi, Shahin ; Lyu, Michael ; Schneider, William C. ; Dantas, Armando R V
Author_Institution :
LSI Logic Corp., Santa Clara, CA, USA
Abstract :
A 1 mu m radiation hardened ASIC gate array HCMOS technology is introduced which has a total dose specification of 3 Mrads(Si). This is based on both X-ray and Co60 gamma ray radiation test results at both the device and circuit level. Transistor threshold shifts of less than 0.45 volts are observed for both N and P channel devices in both on and off bias configurations up to a total dose of 5 Mrad. Also presented are circuit data including RAMs, and ring oscillator data illustrating the radiation tolerance of this technology. The circuit was functional with little additional degradation up to the maximum total dose level tested of 15 Mrad (Si). Single event cross section data gives a threshold LET on this technology of 52 MeV-cm2/mg using 254 MeV Ni and 320 MeV Au. Dose rate data on this technology gives an upset threshold level greater than 1E9 rads (Si)/sec. No SEE latch-up is observed for LET values measured up to 200 MeV-cm2/mg.
Keywords :
CMOS integrated circuits; VLSI; X-ray effects; aerospace instrumentation; aerospace simulation; application specific integrated circuits; gamma-ray effects; integrated circuit testing; logic arrays; logic testing; military equipment; radiation hardening (electronics); 1 micron; 3 Mrad; 5 Mrad; ASIC gate array; CMOS gate array; HCMOS; RAMs; SEU cross section data; VLSI; X-ray radiation test; dose rate effects; gamma ray radiation test; military applications; radiation hardened technology; radiation tolerance; ring oscillator data; spaceborne electronics; threshold LET; transistor threshold shifts; upset threshold level; Application specific integrated circuits; CMOS logic circuits; CMOS technology; Circuit testing; Large scale integration; Logic arrays; Packaging; Radiation hardening; Space technology; Very large scale integration;
Conference_Titel :
Radiation Effects Data Workshop, 1992. Workshop Record., 1992 IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-0930-8
DOI :
10.1109/REDW.1992.247322
