DocumentCode
3390189
Title
The adjustment of threshold voltage on P-Type FinFET devices
Author
Hsin-Chia Yang ; Yi-Hong Lee ; Wen-Shiang Liao ; Chong-Kuan Du ; Jing-Zong Jhang ; Sung-Ching Chi ; Mu-Chun Wang ; Shea-Jue Wang
Author_Institution
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
fYear
2013
fDate
2-4 Jan. 2013
Firstpage
248
Lastpage
250
Abstract
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm) are taken into account.
Keywords
MOSFET; cobalt; leakage currents; silicon; 3-D fins; P-Type FinFET device; cobalt silicide gate; leakage currents; poly-silicon gates; threshold voltage adjustment; Cobalt; Conferences; FinFETs; Logic gates; Materials; Silicides; Threshold voltage; fully silicided gate; mobility; threshold voltage); work function;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location
Singapore
ISSN
2159-3523
Print_ISBN
978-1-4673-4840-9
Electronic_ISBN
2159-3523
Type
conf
DOI
10.1109/INEC.2013.6466013
Filename
6466013
Link To Document