Title :
The adjustment of threshold voltage on P-Type FinFET devices
Author :
Hsin-Chia Yang ; Yi-Hong Lee ; Wen-Shiang Liao ; Chong-Kuan Du ; Jing-Zong Jhang ; Sung-Ching Chi ; Mu-Chun Wang ; Shea-Jue Wang
Author_Institution :
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm) are taken into account.
Keywords :
MOSFET; cobalt; leakage currents; silicon; 3-D fins; P-Type FinFET device; cobalt silicide gate; leakage currents; poly-silicon gates; threshold voltage adjustment; Cobalt; Conferences; FinFETs; Logic gates; Materials; Silicides; Threshold voltage; fully silicided gate; mobility; threshold voltage); work function;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466013
