DocumentCode
3390251
Title
Effect of PECVD SiC and SiCN cap layer deposition on mesoporous silica ultra low k dielectric films
Author
Schulz, S.E. ; Schulze, K. ; Matusche, J. ; Schmidt, U. ; Gessner, T.
Author_Institution
Center of Microtechnologies, Chemnitz Univ. of Technol., Germany
fYear
2003
fDate
31 March-1 April 2003
Firstpage
131
Lastpage
132
Abstract
It is crucial to apply cap layers with minimum permittivity to ensure a minimum effective k-value of the whole dielectric stack. Therefore, the influence of the deposition of PECVD SiC and SiCN cap layers with k < 5.0 on the electrical and chemical properties of low k dielectric films is the subject of this work.
Keywords
dielectric thin films; permittivity; plasma CVD; semiconductor device manufacture; silicon compounds; PECVD; SiC; SiCN; SiO2; advanced process technology; cap layer deposition; chemical properties; dielectric stack; electrical properties; mesoporous silica; minimum effective k-value; minimum permittivity; semiconductor manufacture; ultra low k dielectric films; Chemical technology; Copper; Dielectric films; Dielectric materials; Etching; Leakage current; Mesoporous materials; Plasma measurements; Silicon carbide; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
ISSN
1078-8743
Print_ISBN
0-7803-7681-1
Type
conf
DOI
10.1109/ASMC.2003.1194481
Filename
1194481
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