DocumentCode :
3390266
Title :
A novel CMOS Charge Pump with high performance for phase-locked loops synthesizer
Author :
Zheng, Shuangshuang ; Li, Zhiqun
Author_Institution :
Inst. of RF & OE ICs, Southeast Univ., Nanjing, China
fYear :
2011
fDate :
25-28 Sept. 2011
Firstpage :
1062
Lastpage :
1065
Abstract :
A novel Charge Pump (CP) circuit with high performance is introduced in this paper. A rail-to-rail operational amplifier is used to enable the CP charge and discharge currents to be match well in a wide output voltage range. A unity-gain amplifier is adopted to eliminate the current sharing problem. Besides, the high initial charge current shortens the settling time of charge pump phase-locked-loops (CPPLLs). The proposed CP designed and realized in 0.18μm CMOS process. The test results show that the current mismatch rate can be less than 0.5% in the output voltage range of 0.23V to 1.72V, with the charge pump current of 100μA and the precharging current of 109μA. The average power consumption of the charge pump in the locked condition is around 0.57mW under 1.8V supply voltage.
Keywords :
CMOS analogue integrated circuits; charge pump circuits; operational amplifiers; phase locked loops; CMOS process; PLL; charge pump charge; charge pump circuit; current 100 muA; current 109 muA; discharge currents; phase-locked loops synthesizer; rail-to-rail operational amplifier; size 0.18 mum; unity-gain amplifier; voltage 0.23 V to 1.72 V; voltage 1.8 V; Charge pumps; Clocks; Phase frequency detector; Phase locked loops; Simulation; Switches; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Technology (ICCT), 2011 IEEE 13th International Conference on
Conference_Location :
Jinan
Print_ISBN :
978-1-61284-306-3
Type :
conf
DOI :
10.1109/ICCT.2011.6158043
Filename :
6158043
Link To Document :
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