Title :
Reliability study of a low-voltage Class-E power amplifier in 130nm CMOS
Author :
Fritzin, Jonas ; Sundström, Timmy ; Johansson, Ted ; Alvandpour, Atila
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Linköping, Sweden
fDate :
May 30 2010-June 2 2010
Abstract :
This paper presents reliability measurements of a differential Class-E power amplifier (PA) operating at 850MHz in 130nm CMOS. The RF performance of five samples was tested. At 1.1V, the PAs deliver +20.4-21.5dBm of output power with drain efficiencies and power-added efficiencies of 56-64% and 46-51%, respectively. After a continuous long-term test of 240 hours at elevated supply voltage of 1.4V, the output power dropped about 0.7dB.
Keywords :
CMOS analogue integrated circuits; integrated circuit reliability; power amplifiers; CMOS; frequency 850 MHz; low-voltage class-E power amplifier; reliability measurements; reliability study; size 130 nm; time 240 hour; voltage 1.1 V; voltage 1.4 V; Bonding; CMOS technology; Differential amplifiers; Frequency; Parasitic capacitance; Power amplifiers; Power generation; Power measurement; Testing; Voltage; CMOS; efficiency; power amplifier; reliability testing;
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
DOI :
10.1109/ISCAS.2010.5537959
