Title :
Doped group-IV semiconductor nanocrystals
Author :
Nataraj, L. ; Jackson, Andrew ; Giri, L. ; Hubbard, C. ; Bundy, M.
Author_Institution :
U.S. Army Res. Lab., Aberdeen Proving Ground, MD, USA
Abstract :
Doped semiconductor nanocrystals offer great potential for microelectronics and integrated optoelectronics. Nanocrystal based technology is promising for several fields of technology such as thin conducting films, light emitting devices, tunable lasers, transistors, photovoltaics, and less harmful alternatives to toxic fluorescent dyes for application in bio-imaging, to name a few. While properties of nanocrystals are tunable through their size, considerable research is underway to explore the influence of dopants on the properties of semiconductor nanocrystals. The introduction of dopants has been elusive for these confined structures due to their nanoscale sizes as well as the possibility of making them degenerate even with the addition of very small quantities of the dopant. Here, we present a facile, low-cost procedure that we have developed for the synthesis of non-degenerate doped semiconductor nanocrystals and study their properties.
Keywords :
IV-VI semiconductors; integrated optoelectronics; light emitting devices; nanofabrication; nanostructured materials; semiconductor doping; transistors; dopants; doped group-IV semiconductor nanocrystals; integrated optoelectronics; light emitting devices; microelectronics; nanocrystal based technology; nondegenerate doped semiconductor nanocrystals; photovoltaics; thin conducting films; toxic fluorescent dyes; transistors; tunable lasers; Conferences; Decision support systems; Nanoelectronics;
Conference_Titel :
Nanoelectronics Conference (INEC), 2013 IEEE 5th International
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-4840-9
Electronic_ISBN :
2159-3523
DOI :
10.1109/INEC.2013.6466028