DocumentCode :
3390482
Title :
Fault detection and isolation for plasma etching using model-based approach
Author :
Cheng, Mu-Huo ; Huan-Shin, L. ; Lin, Shin-Yeu ; Liu, Chun-Hung ; Lee, Wen-yo ; Tsai, Chia-hung
Author_Institution :
Dept. of Electr. & Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2003
fDate :
31 March-1 April 2003
Firstpage :
208
Lastpage :
214
Abstract :
A fault detection and isolation system using model-based approach for the chamber pressure of plasma etching is developed. The dynamics of chamber pressure is modeled as a linear multiple-input-single-output closed-loop system and the model parameters are extracted by the system identification technique. The obtained parameters are then converted to physically meaningful features for detecting and isolating faults. The fuzzy inference and Dempster-Shafer evidence combining techniques are employed to detect and isolate fault from the features. The system has been evaluated by the measured data that are collected via SECS-II from the employed Lam490 plasma etcher for processing practical products. The test results are satisfactory for a large amount of practical data and extensive computer simulations.
Keywords :
closed loop systems; fault diagnosis; feature extraction; fuzzy set theory; identification; inference mechanisms; semiconductor process modelling; sputter etching; Dempster-Shafer technique; SECS-II Lam490; chamber pressure dynamics; computer simulation; fault detection and isolation; feature extraction; fuzzy inference; linear MISO closed-loop system; model-based approach; parameter extraction; plasma etching; semiconductor manufacturing; system identification; Computer vision; Data mining; Etching; Fault detection; Plasma applications; Plasma materials processing; Plasma measurements; Plasma simulation; System identification; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
ISSN :
1078-8743
Print_ISBN :
0-7803-7681-1
Type :
conf
DOI :
10.1109/ASMC.2003.1194494
Filename :
1194494
Link To Document :
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