Intraband emission and absorption of terahertz radiation in GaAs/AlGaAs quantum wells

Author

Ganichev, S.D. ; Danilov, S.N. ; Gerl, Ch ; Firsov, D.A. ; Vorobjev, L.E. ; Shalygin, V.A. ; Panevin, V.Yu. ; Sofronov, A.N. ; Andrianov, A.A. ; Zakhar, A.O. ; Zhukov, A.E. ; Mikhrin, V.S. ; Vasil, A.P.

Author_Institution

Terahertz Center, Regensburg Univ., Regensburg

fYear

2007

fDate

2-9 Sept. 2007

Firstpage

623

Lastpage

624

Abstract

Spontaneous emission of terahertz radiation, equilibrium intraband terahertz light absorption and its temperature dependence are studied in GaAs/AlGaAs quantum well (QW) structures subjected to a lateral electric field. The emission spectrum consists of several lines we attribute to electron transitions between resonant and localized impurity states and to the electron transitions with participation of subband states.

Keywords

III-V semiconductors; aluminium compounds; electro-optical effects; electroluminescence; gallium arsenide; semiconductor quantum wells; submillimetre wave spectra; GaAs-AlGaAs; electron transitions; emission spectrum; intraband absorption; intraband emission; lateral electric field; light absorption; localized impurity states; quantum wells; resonant states; spontaneous emission; subband states; temperature dependence; terahertz radiation; Absorption; Electric variables measurement; Gallium arsenide; Performance evaluation; Physics; Quantum cascade lasers; Resonance; Semiconductor impurities; Submillimeter wave measurements; Wavelength measurement; Intraband light absorption; lateral electric field; quantum wells; resonant impurity states; spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on

Conference_Location

Cardiff

Print_ISBN

978-1-4244-1438-3

Type

conf

DOI

10.1109/ICIMW.2007.4516654

Filename

4516654