Title :
The reverse and forward gate-diode drain current in ultra-thin LDD nMOSFET´s
Author :
Chen Haifeng ; Du Huimin
Author_Institution :
Sch. of Electron. Eng., Xi´an Univ. of Posts & Telecommun., Xi´an, China
Abstract :
The reverse and forward gated-diode drain (GDD) current in LDD NMOSFET with 1.4nm gate oxide have been studied. It is found that the reverse GDD current increases sharply with decreasing the gate voltage VG when the channel is in the accumulation region and the forward GDD current increases sharply with increasing VG when the channel is in the inversion region. These phenomena are different from that of the device with the thick gate oxide. In the accumulation region, the reverse GDD current is very large because of the large gate-induced drain tunneling (GIDL) current induced by the thin gate oxide. The forward VG effectively make the drain PN junction forward biased due to thin gate oxide when the channel is in the inversion region in the case of the forward GDD current. Then the large PN junction current is generated and this leads to the forward GDD current increases quickly with increasing VG.
Keywords :
MOSFET; interface states; p-n junctions; forward gate-diode drain current; gate-induced drain tunneling current; reverse gate-diode drain current; thin gate oxide; ultra thin LDD nMOSFET; Current measurement; Electron traps; Junctions; Logic gates; MOSFET circuits; Substrates; Tunneling; GIDL; LDD; accumulation; gated-diode; inversion;
Conference_Titel :
Mechatronic Science, Electric Engineering and Computer (MEC), 2011 International Conference on
Conference_Location :
Jilin
Print_ISBN :
978-1-61284-719-1
DOI :
10.1109/MEC.2011.6025483