Title :
NPN yield improvement with ozone surface treatment prior to emitter poly deposition
Author :
Tran-Quinn, T. ; Bell, N. ; Cook, R. ; Fung, M.S. ; Andrews, J.W. ; Hilscher, D. ; Szmyd, D. ; Saikuma, V. ; Ketcheson, R. ; Kellawon, P. ; Calvelli, S.
Author_Institution :
Philips Semicond., Hopewell Junction, NY, USA
fDate :
31 March-1 April 2003
Abstract :
A localized product yield degradation was observed on 0.25um BiCMOS product and was found to correlate to suppression of the NPN base and emitter currents. The addition of an ozone plasma clean prior to emitter polysilicon deposition helped to improve base current distribution across the wafers.
Keywords :
bipolar transistors; ozone; plasma materials processing; surface cleaning; 0.25 micron; BiCMOS product yield; NPN transistor; O3; base current; emitter current; ozone plasma clean; polysilicon emitter deposition; surface treatment; BiCMOS integrated circuits; Cleaning; Contacts; Etching; Failure analysis; Plasma applications; Silicon; Surface treatment; Testing; Transistors;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
Print_ISBN :
0-7803-7681-1
DOI :
10.1109/ASMC.2003.1194509
