DocumentCode :
3390794
Title :
An effective methodology for improving equipment reliability and reducing excursions during a factory ramp
Author :
Lantz, S.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fYear :
2003
fDate :
31 March-1 April 2003
Firstpage :
297
Lastpage :
302
Abstract :
This paper describes the continuous improvement methodology that was developed and used in the Cu CMP area of Intel´s Fab 20 during the 0.13 μm logic technology production ramp from July 2001 through Sept. 2002. Significant and lasting improvements were realized by the systematic application of manufacturing engineering principles. Although many technical process changes were made as a result of these activities, the main focus of the paper is the methodology employed and a reflection on the effectiveness of the key elements of overall effort.
Keywords :
chemical mechanical polishing; integrated circuit manufacture; quality control; reliability; 0.13 micron; Cu; Cu CMP area; continuous improvement methodology; data collection; equipment reliability; excursion control; factory ramp; logic technology production ramp; Continuous improvement; Continuous production; Copper; Costs; Logic; Manufacturing; Metallization; Production facilities; Reflection; Reliability engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI
ISSN :
1078-8743
Print_ISBN :
0-7803-7681-1
Type :
conf
DOI :
10.1109/ASMC.2003.1194510
Filename :
1194510
Link To Document :
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