DocumentCode :
3390860
Title :
Efficiency enhancement and linearity trade-offs for cascode vs. common-emitter SiGe power amplifiers in WiMAX polar transmitters
Author :
Li, Yan ; Lopez, Jerry ; Lie, Donald Y C ; Chen, Kevin ; Wu, Stanley ; Yang, Tzu-Yi
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
fYear :
2010
fDate :
May 30 2010-June 2 2010
Firstpage :
1915
Lastpage :
1918
Abstract :
In this paper, a monolithic RF cascode SiGe power amplifier (PA) design capable of enhancing its power-added efficiency (PAE) is demonstrated. Four RF switches are adopted at the bases of the common-emitter transistors, which can be turned on/off in response to the desired output power. Simulations show that by utilizing device size variation, our cascode PA achieves higher gain and PAE compared to conventional fixed-size cascode PA in the low power region; in addition, it also provides more output power and higher average PAE than single-stage common-emitter PAs. We also studied and compared the linearity performance of our cascode PAs vs. single-stage common-emitter PAs in a RF polar TX using an envelope tracking (ET) technique. We found that even through self-biasing for the common-base device can improve the output distortion of cascode PAs, a single-stage common-emitter SiGe PA designed for comparison is still considerably more linear than cascode PAs. Therefore, more careful system linearization design will be critical when the cascode PAs are adopted in RF polar transmitters (TXs), especially for broadband wireless applications such as mobile WiMAX studied here.
Keywords :
WiMax; germanium compounds; linearisation techniques; mobile radio; power amplifiers; radio transmitters; silicon compounds; transistors; RF polar transmitters; RF switches; SiGe; WiMAX polar transmitters; cascode; common-emitter power amplifiers; common-emitter transistors; efficiency enhancement; envelope tracking technique; linearity trade-offs; mobile WiMAX; power-added efficiency; system linearization design; Germanium silicon alloys; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Switches; Transmitters; WiMAX;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location :
Paris
Print_ISBN :
978-1-4244-5308-5
Electronic_ISBN :
978-1-4244-5309-2
Type :
conf
DOI :
10.1109/ISCAS.2010.5537979
Filename :
5537979
Link To Document :
بازگشت