DocumentCode
3390860
Title
Efficiency enhancement and linearity trade-offs for cascode vs. common-emitter SiGe power amplifiers in WiMAX polar transmitters
Author
Li, Yan ; Lopez, Jerry ; Lie, Donald Y C ; Chen, Kevin ; Wu, Stanley ; Yang, Tzu-Yi
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
fYear
2010
fDate
May 30 2010-June 2 2010
Firstpage
1915
Lastpage
1918
Abstract
In this paper, a monolithic RF cascode SiGe power amplifier (PA) design capable of enhancing its power-added efficiency (PAE) is demonstrated. Four RF switches are adopted at the bases of the common-emitter transistors, which can be turned on/off in response to the desired output power. Simulations show that by utilizing device size variation, our cascode PA achieves higher gain and PAE compared to conventional fixed-size cascode PA in the low power region; in addition, it also provides more output power and higher average PAE than single-stage common-emitter PAs. We also studied and compared the linearity performance of our cascode PAs vs. single-stage common-emitter PAs in a RF polar TX using an envelope tracking (ET) technique. We found that even through self-biasing for the common-base device can improve the output distortion of cascode PAs, a single-stage common-emitter SiGe PA designed for comparison is still considerably more linear than cascode PAs. Therefore, more careful system linearization design will be critical when the cascode PAs are adopted in RF polar transmitters (TXs), especially for broadband wireless applications such as mobile WiMAX studied here.
Keywords
WiMax; germanium compounds; linearisation techniques; mobile radio; power amplifiers; radio transmitters; silicon compounds; transistors; RF polar transmitters; RF switches; SiGe; WiMAX polar transmitters; cascode; common-emitter power amplifiers; common-emitter transistors; efficiency enhancement; envelope tracking technique; linearity trade-offs; mobile WiMAX; power-added efficiency; system linearization design; Germanium silicon alloys; Linearity; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Switches; Transmitters; WiMAX;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Conference_Location
Paris
Print_ISBN
978-1-4244-5308-5
Electronic_ISBN
978-1-4244-5309-2
Type
conf
DOI
10.1109/ISCAS.2010.5537979
Filename
5537979
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