Enhancement of comparator operation speed by using negative-differential-resistance devices

Author

Ebata, Tomohiko ; Omae, Uichiro ; Machida, Kazuya ; Hoshi, Keita ; Waho, Takao

Author_Institution

Dept. of Inf. & Commun. Sci., Sophia Univ., Tokyo, Japan

fYear

2010

fDate

May 30 2010-June 2 2010

Firstpage

3020

Lastpage

3023

Abstract

Enhancement of comparator operation speed by using negative-differential-resistance (NDR) devices has been investigated. A clocked comparator including resonant-tunneling diodes (RTD) as the NDR devices as well as high-electron-mobility transistors (HEMT) is designed. Theoretical analysis based on equivalent circuits and transistor-level circuit simulation are carried out to estimate the regeneration and recovery times, as figures of merit, It is found that the regeneration time is reduced by 50% by using the RTDs, while the recovery time remains almost at the same value.

Keywords

comparators (circuits); equivalent circuits; high electron mobility transistors; negative resistance devices; resonant tunnelling diodes; semiconductor device models; HEMT; clocked comparator; comparator operation speed enhancement negative-differential-resistance devices; equivalent circuits; high-electron-mobility transistors; resonant-tunneling diodes; transistor-level circuit simulation; Analog-digital conversion; CMOS technology; Circuit simulation; Clocks; Communication systems; Equivalent circuits; HEMTs; Latches; Resonant tunneling devices; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on

Conference_Location

Paris

Print_ISBN

978-1-4244-5308-5

Electronic_ISBN

978-1-4244-5309-2

Type

conf

DOI

10.1109/ISCAS.2010.5538003

Filename

5538003